Product Summary

The K6X0808C1D-DF55 is a 32Kx8 bit Low Power full CMOS Static RAM. It is fabricated by SAMSUNG’s advanced CMOS process technology. The K6X0808C1D-DF55 supports verious operating temperature ranges and has various package types for user flexibility of system design. The K6X0808C1D-DF55 also supports low data retention voltage for battery back-up operation with low data retention current.

Parametrics

K6X0808C1D-DF55 absolute maximum ratings: (1)Voltage on any pin relative to Vss:-0.5 to VCC+0.5V(Max. 7.0V); (2)Voltage on Vcc supply relative to Vss:-0.3 to 7.0 V; (3)Power Dissipation:1.0 W; (4)Storage temperature:-65 to 150℃; (5)Operating Temperature:-40 to 85℃.

Features

K6X0808C1D-DF55 features: (1)Process Technology: Full CMOS; (2)Organization: 32K x 8; (3)Power Supply Voltage: 4.5 to 5.5V; (4)Low Data Retention Voltage: 2V(Min); (5)Three state output and TTL Compatible; (6)Package Type: 28-DIP-600B, 28-SOP-450, 28-TSOP1-0813.4F/R.

Diagrams

K6X0808C1D-DF55 block diagram

K6X0808C1D-F
K6X0808C1D-F

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K6X0808C1D-Q
K6X0808C1D-Q

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K6X0808T1D-B
K6X0808T1D-B

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K6X0808T1D-F
K6X0808T1D-F

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K6X0808T1D-Q
K6X0808T1D-Q

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