Product Summary

The K6X4008C1F-BF55 is a 512Kx8 bit Low Power full CMOS Static RAM. It is fabricated by SAMSUNG’s advanced full CMOS process technology. The K6X4008C1F-BF55 supports various operating temperature range and various package types for user flexibility of system design. The device also support low data retention voltage for battery back-up operation with low data retention current.

Parametrics

K6X4008C1F-BF55 absolute maximum ratings: (1)Voltage on any pin relative to Vss:-0.5V to VCC+0.5V(max.7.0V); (2)Voltage on Vcc supply relative to Vss:-0.3V to 7.0V; (3)Power Dissipation:1.0W; (4)Storage temperature:-65℃ to +150℃; (5)Operating Temperature:-40℃ to +85℃.

Features

K6X4008C1F-BF55 features: (1)Process Technology: Full CMOS; (2)Organization: 512Kx8; (3)Power Supply Voltage: 4.5V to 5.5V ; (4)Low Data Retention Voltage: 2V(Min); (5)Three state output and TTL compatible; (6)Package Type: 32-DIP-600, 32-SOP-525, 32-TSOP2-400F/R.

Diagrams

K6X4008C1F-BF55 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
K6X4008C1F-BF55
K6X4008C1F-BF55

Other


Data Sheet

Negotiable 
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
K6X4008
K6X4008

Other


Data Sheet

Negotiable 
K6X4008C1F-B
K6X4008C1F-B

Other


Data Sheet

Negotiable 
K6X4008C1F-BF55
K6X4008C1F-BF55

Other


Data Sheet

Negotiable 
K6X4008C1F-F
K6X4008C1F-F

Other


Data Sheet

Negotiable 
K6X4008C1F-Q
K6X4008C1F-Q

Other


Data Sheet

Negotiable 
K6X4008C1F-UF55 (ROHS)
K6X4008C1F-UF55 (ROHS)

Other


Data Sheet

Negotiable